สรุป: Discover the high-performance Indium Arsenide (InAs) Single Crystal Monocrystal Semiconductor Substrate, ideal for infrared detectors, quantum dot technology, and high-speed electronics. Learn about its unique properties and applications in modern semiconductor and optoelectronic fields.
คุณสมบัติของผลิตภัณฑ์ที่เกี่ยวข้อง:
Indium Arsenide (InAs) substrates are perfect for high-performance infrared detectors in mid and long-wavelength ranges.
Used in quantum dot technology for advanced optoelectronic devices like lasers and solar cells.
Excellent electron mobility makes InAs suitable for high-speed electronics and telecommunications.
Popular material for optoelectronic devices such as lasers and photodetectors due to its direct bandgap.
Superior thermoelectric properties enable use in thermoelectric generators and coolers.
Grown using liquid-sealed straight-drawing technology (LEC) for stable electrical performance.
Precise crystal orientation with deviation of only ±0.5° using X-ray directional instruments.
Chemically mechanically polished (CMP) for surface roughness <0.5nm, ready for immediate use.
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